On the growth and doping of Fe/Ti chalcogenide thin films

On the growth and doping of Fe/Ti chalcogenide thin films

Formation of pyrite (FeS 2) thin films by sulphuration of metallic layers (Fe) and bilayers (Fe–Ti) has been investigated. An experimental technique, which allows the measurement of both the electrical resistance ( R) and the thermoelectric coefficient ( S) of the films during the sulphuration proce...

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Veröffentlicht in:Solar energy materials and solar cells 2005-05, Vol.87 (1), p.575-582
Hauptverfasser: Pascual, A., Diaz-Chao, P., Ferrer, I.J., Sánchez, C., Ares, J.R.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Doping
Energy
Exact sciences and technology
Metallic chalcogenide
Natural energy
Solar energy
Thin films
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Zusammenfassung:Formation of pyrite (FeS 2) thin films by sulphuration of metallic layers (Fe) and bilayers (Fe–Ti) has been investigated. An experimental technique, which allows the measurement of both the electrical resistance ( R) and the thermoelectric coefficient ( S) of the films during the sulphuration process (in situ), has been used. Sulphurated Fe–Ti bilayers appear to be n-type semiconductors in contrast with sulphurated Fe films, which are always p-type semiconductors. The change of conductivity type has been attributed to the doping effect of FeS 2 films by Ti.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2004.08.019