Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures
A series of (AlGaIn)N LEDs covering the 377 to 428 nm wavelength interval has been analyzed by pulsed electro‐ and temperature dependent photo‐luminescence with respect to the carrier density dependence of the quantum efficiency and peak position. A non‐thermal rollover of the quantum efficiency vs....
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2007-01, Vol.204 (1), p.236-240 |
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| container_title | Physica status solidi. A, Applications and materials science |
| container_volume | 204 |
| creator | Kunzer, M. Baeumler, M. Köhler, K. Leancu, C.-C. Kaufmann, U. Wagner, J. |
| description | A series of (AlGaIn)N LEDs covering the 377 to 428 nm wavelength interval has been analyzed by pulsed electro‐ and temperature dependent photo‐luminescence with respect to the carrier density dependence of the quantum efficiency and peak position. A non‐thermal rollover of the quantum efficiency vs. current is observed for the LEDs with higher In content and longer wavelengths (λ > 400 nm). The photoluminescence data reveal In induced band tails as well as the presence of a quantum confined stark effect. Both effects contribute to the observed non‐thermal rollover. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssa.200673516 |
| format | Article |
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| subjects | 73.21.Fg 78.55.Cr 78.60.Fi 81.05.Ea 85.60.Jb Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures |
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