Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures

Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures

A series of (AlGaIn)N LEDs covering the 377 to 428 nm wavelength interval has been analyzed by pulsed electro‐ and temperature dependent photo‐luminescence with respect to the carrier density dependence of the quantum efficiency and peak position. A non‐thermal rollover of the quantum efficiency vs....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2007-01, Vol.204 (1), p.236-240
Hauptverfasser: Kunzer, M., Baeumler, M., Köhler, K., Leancu, C.-C., Kaufmann, U., Wagner, J.
Format: Artikel
Sprache:eng
Schlagworte:
73.21.Fg
78.55.Cr
78.60.Fi
81.05.Ea
85.60.Jb
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A series of (AlGaIn)N LEDs covering the 377 to 428 nm wavelength interval has been analyzed by pulsed electro‐ and temperature dependent photo‐luminescence with respect to the carrier density dependence of the quantum efficiency and peak position. A non‐thermal rollover of the quantum efficiency vs. current is observed for the LEDs with higher In content and longer wavelengths (λ > 400 nm). The photoluminescence data reveal In induced band tails as well as the presence of a quantum confined stark effect. Both effects contribute to the observed non‐thermal rollover. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6300
0031-8965
1862-6319
DOI:10.1002/pssa.200673516