In-process measurement of memory properties of MNOS devices

In-process measurement of memory properties of MNOS devices

A simple, easy to use C-V technique has been developed for in-process measurement of memory properties of MNOS devices. No metallization of the wafers is required and the technique is applicable to device wafers directly after the memory nitride/oxide deposition. Using this technique, good correlati...

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Veröffentlicht in:IEEE transactions on electron devices 1978-08, Vol.25 (8), p.1072-1074
Hauptverfasser: Multani, J.S., Kosicki, B.B., Sandhu, J.S.
Format: Artikel
Sprache:eng
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Zusammenfassung:A simple, easy to use C-V technique has been developed for in-process measurement of memory properties of MNOS devices. No metallization of the wafers is required and the technique is applicable to device wafers directly after the memory nitride/oxide deposition. Using this technique, good correlation of charge retention properties of memory nitride-oxide capacitors before metallization with finished test transistors after metallization has been found.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1978.19227