Investigation of electrical conductivity in Schottky-barrier devices based on nickel phthalocyanine thin films

Evaporated multilayer sandwich structure of Au/NiPc/Al was fabricated by thermal evaporation technique. The electrical conductivity of Au/NiPc/Al device has been measured both as prepared and after annealing at 623 K for 2 h. Under forward bias conditions, ohmic and SCLC conductions were identified at low and higher voltages respectively. After annealing, a strong rectifying effect was observed. The potential barrier height and the depletion region width for annealed sample were calculated as 0.96 eV and 70 nm, respectively. Hole and trap parameters for as prepared and after annealing devices, also, were evaluated.