STRUCTURALLY AND ELECTRICALLY UNIFORM DEPOSITION OF HIGH-k TiO2 THIN FILMS ON A Ru ELECTRODE IN THREE-DIMENSIONAL CONTACT HOLES USING ATOMIC LAYER DEPOSITION

Atomic-layer-deposited (ALD) TiO2 thin films with a high bulk dielectric constant (k about 100) were grown on an ALD Ru electrode at a growth temperature of 250 C. The films were grown on flat and contact hole structured Ru electrodes. The as-deposited films were crystallised with a rutile structure due to the adoption of O3 oxidant with a very high concentration (400 g/m3). The electrical measurements of the Ru/TiO2/Ru capacitors fabricated on the contact hole structures with different hole sizes and distances between the holes showed that the film's thickness, crystalline structure, and dielectric properties are uniform over the entire three-dimensional structure. 11 refs.