Investigation of mid-infrared type-II W diode lasers
We report an experimental investigation of 16 different mid-infrared diode laser samples with type-II "W" active regions. A number of design modifications were employed to study effects on the I-V characteristics, lasing threshold, and wallplug efficiency. Contrary to expectations, the thr...
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Veröffentlicht in: | Journal of electronic materials 2006-03, Vol.35 (3), p.453-461 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report an experimental investigation of 16 different mid-infrared diode laser samples with type-II "W" active regions. A number of design modifications were employed to study effects on the I-V characteristics, lasing threshold, and wallplug efficiency. Contrary to expectations, the threshold current density at low temperatures did not vary significantly with the number of active quantum-well periods, nor was there any clear correlation between lasing threshold and photoluminescence intensity. A shorter-wavelength device (3.2-3.6 µm) produced >500 mW of cw power at 80 K, and a second device displayed a wallplug efficiency >10%. The maximum lasing temperature was 317 K for pulsed operation and 218 K for cw operation. At T = 100 K, cavity-length studies indicated an internal loss of 7 cm^sup -1^ and nominal internal efficiency of 96%. Hakki-Paoli measurements of the gain spectrum implied an intrinsic linewidth enhancement factor of ~1.3, which slightly exceeds the theoretical prediction. Longer-wavelength devices (λ [asymptotically =] 3.8-4.5 µm) showed similarly low threshold current densities at T = 80 K but degraded more rapidly with increasing temperature. [PUBLICATION ABSTRACT] |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/BF02690532 |