Anisotropic Hall effect in single crystal heavy fermion YbAgGe
Temperature- and field-dependent Hall effect measurements (down to T = 50 mK and up to H = 18 T ) are reported for YbAgGe, a heavy fermion compound exhibiting a field-induced quantum phase transition. Whereas the temperature-dependent Hall coefficient of YbAgGe shows behavior similar to what has bee...
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Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2006-05, Vol.378, p.87-89 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Temperature- and field-dependent Hall effect measurements (down to
T
=
50
mK
and up to
H
=
18
T
) are reported for YbAgGe, a heavy fermion compound exhibiting a field-induced quantum phase transition. Whereas the temperature-dependent Hall coefficient of YbAgGe shows behavior similar to what has been observed in a number of heavy fermion compounds, the low-temperature, field-dependent measurements reveal well defined, sudden changes with applied field. Distinct features in the anisotropic field-dependent Hall resistivity sharpen on cooling down and at the base temperature are close to the respective critical fields for the field-induced quantum critical point. At low-temperatures, the functional form of the field-dependent Hall coefficient is field-direction-dependent and complex beyond simple existing models, thus reflecting the multi-component Fermi surface of the material and its non-trivial modification at the quantum critical point. |
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ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/j.physb.2006.01.035 |