Influence of composition and sintering temperature on density of structure defects, phase transitions, and properties of magneto-resistive strontium-doped ceramic of manganate-lanthanum perovskites
Ceramic samples of La 1-x Sr x MnO 3 (x = ,0.,0.1,0.,0.3, 0.4), sintered at different temperatures (1150, 1200, 1350, and 1500 deg C) are investigated by means of methods of x-ray diffraction analysis and resistive and magnetic analysis. It is established that the perovskite structure parameter (a)...
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Veröffentlicht in: | Powder metallurgy and metal ceramics 2006-09, Vol.45 (9-10), p.432-440 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Ceramic samples of La 1-x Sr x MnO 3 (x = ,0.,0.1,0.,0.3, 0.4), sintered at different temperatures (1150, 1200, 1350, and 1500 deg C) are investigated by means of methods of x-ray diffraction analysis and resistive and magnetic analysis. It is established that the perovskite structure parameter (a) and degree of its rhombohedric distortion (alpha) both decrease with increasing content of Sr in La 1-x Sr x MnO 3+/-delta (x = 0-0.4). The metal-semiconductor (Tms) and ferromagnetic-paramagnetic (Tc) phase transition temperatures and magnetoresistive peak temperature (Tp) all increase, while the activation energy (Ea) decreases. The density of defects in the lattice which contains anion (V) and cation (in A and B positions) vacancies, average valency of manganese (omega), and tolerance factor (t) also increase. It is shown that with Sr doping, charge compensation is achieved by two mechanisms, first, the Mn - > Mn transition (~80%), and second, the formation of V vacancies (~20%), with the contribution of the second mechanism increasing with increasing sintering temperature. With increasing x the magnetoresistive effect decreases at Tp and the lowfield tunneling magnetoresistive effect increases slightly. It is established that the concentration dependence of the intracrystaline peak magnetoresistive effect at Tp is opposite to the concentration dependence of the intercrystalline magnetoresistive effect in the semiconductor region for T < < Tp. |
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ISSN: | 1068-1302 1573-9066 |
DOI: | 10.1007/s11106-006-0102-1 |