Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructures

Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructures

The photoluminescence of various Si ion implanted oxide layers annealed at high-temperature has been studied in the range of 350–1500 nm. The set of investigated oxide materials includes thermal SiO 2, deposited SiO 2, Si 0.9Ge 0.1O 2, GeO 2 films on silicon substrate, and sapphire wafers. The resul...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Thin solid films 2006-09, Vol.515 (1), p.333-337
Hauptverfasser: Tetelbaum, D.I., Gorshkov, O.N., Ershov, A.V., Kasatkin, A.P., Kamin, V.A., Mikhaylov, A.N., Belov, A.I., Gaponova, D.M., Pavesi, L., Ferraioli, L., Finstad, T.G., Foss, S.
Format: Artikel
Sprache:eng
Schlagworte:
Ion implantation
Nanostructures
Oxides
Photoluminescence
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The photoluminescence of various Si ion implanted oxide layers annealed at high-temperature has been studied in the range of 350–1500 nm. The set of investigated oxide materials includes thermal SiO 2, deposited SiO 2, Si 0.9Ge 0.1O 2, GeO 2 films on silicon substrate, and sapphire wafers. The results are discussed in terms of generation and modification of the defect centers and nanoclusters formation taking into account several factors related to composition and structure of the original oxide matrices.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.12.088