In-depth analysis of defects of an insulating sample by cathodoluminescence

From the classical cathodoluminescence (CL) model, a new method is developed to carry out an in‐depth analysis of an insulating target luminescent defects. The depth profiling is performed using an electron beam energy variation and consequently a CL excitation range variation. The in‐depth distribution of defects is then obtained using numerical algorithms. Different ways are compared and the best method is evaluated by using the experimental results in the literature. The localization of defects is more realistic by using this algorithm compared to classical models. This new model is applied to the localization of subsurface defects in silica glass samples treated with different polishing processes. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)