Nano-line width control and standards using Lateral Pattern Definition technique

Lateral Pattern Definition technique was adopted for manufacturing nano-size width standards. Narrow oxide fences, 40 nm to 100 nm wide were manufactured using very simple technological instrumentation. Poly-Si and mono-Si step technology versions were presented. Layout of the standards together with requirements for oxidation and etch processes were given. SEM estimation of the results was performed. Mechanical strength of the manufactured oxide fence was calculated. Standards were tested with use of an AFM method. It was observed that mechanical durability of the nano-fences was better than that of examined stylus.