Numerical simulation of Si1-xGex/HfO2/Si MOS devices

We study Si1–xGex/HfO2/Si MOS devices focusing on the simulation of the total gate capacitance. We found that the threshold voltage slightly increases with the amount of Ge and that it is possible to decrease the gate depletion effect by controlling the content of Ge.The most remarkable result is th...

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Veröffentlicht in:	Physica status solidi. C 2005-05, Vol.2 (8), p.2955-2957
Hauptverfasser:	Costa e Silva, J., de Oliveira, E. L., Freire, J. A. K., de Sousa, J. S., Freire, V. N., Farias, G. A., da Silva Jr, E. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	02.60.Cp 84.32.Tt 85.30.De
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We study Si1–xGex/HfO2/Si MOS devices focusing on the simulation of the total gate capacitance. We found that the threshold voltage slightly increases with the amount of Ge and that it is possible to decrease the gate depletion effect by controlling the content of Ge.The most remarkable result is that the combination of HfO2 as dielectric film and polycrystalline gates leads to gate inversion effect for small thicknesses of the dielectric film. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1610-1634 1610-1642
DOI:	10.1002/pssc.200460724