Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor

Lanthanum aluminate (LaAlO3) has a wide range of potential materials applications; we report the first liquid injection ALD growth of LaAlO3 from a single source precursor, and compare it with growth by liquid injection MOCVD.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of materials chemistry 2006-01, Vol.16 (39), p.3854-3860
Hauptverfasser:	GASKELL, Jeffrey M, JONES, Anthony C, ASPINALL, Helen C, PRZYBYLAK, Szymon, CHALKER, Paul R, BLACK, Kate, DAVIES, Hywel O, TAECHAKUMPUT, Pouvanart, TAYLOR, Stephen, CRITCHLOW, Gary W
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Dielectric properties of solids and liquids Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Permittivity (dielectric function) Physics
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Beschreibung
Zusammenfassung:	Lanthanum aluminate (LaAlO3) has a wide range of potential materials applications; we report the first liquid injection ALD growth of LaAlO3 from a single source precursor, and compare it with growth by liquid injection MOCVD.
ISSN:	0959-9428 1364-5501
DOI:	10.1039/b609129f