Growth of very low arsenic-doped HgCdTe

Arsenic is known to be an amphoteric impurity that may occupy either sublattice in HgCdTe depending upon sample annealing. As an acceptor in low concentrations, it offers several features that are attractive for the fabrication of certain n+-on-p detector diode structures. The epitaxial growth of ar...

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Veröffentlicht in:Journal of electronic materials 2005-06, Vol.34 (6), p.963-967
Hauptverfasser: CHANDRA, D, WEIRAUCH, D. F, SCHAAKE, H. F, KINCH, M. A, AQARIDEN, F, WAN, C. F, SHIH, H. D
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Sprache:eng
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Zusammenfassung:Arsenic is known to be an amphoteric impurity that may occupy either sublattice in HgCdTe depending upon sample annealing. As an acceptor in low concentrations, it offers several features that are attractive for the fabrication of certain n+-on-p detector diode structures. The epitaxial growth of arsenic-doped HgCdTe from a Te-rich melt can fulfill the requirements for application in a variety of devices where low vacancy concentrations and low defect densities are critical requirements in minimizing dark currents. These devices may include the high operating temperature (HOT) detectors operated in a strong nonequilibrium and reverse bias mode to suppress the Auger-generated dark currents. For the materials' growth process to be effective, the segregation coefficient determining the incorporation of arsenic from the Te-rich melt needs to be established. This coefficient was measured during these investigations and was observed to vary with arsenic concentration. Within the range of interest, this parameter varied between 8 × 10^sup -6^ and 1 × 10^sup -4^. These extremely small values limit the doping that can be achieved to
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-005-0051-3