Materials chemistry for low-k materials
The microelectronics industry is constantly trying to reinvent itself, to find new technological solutions to keep pace with the trend of increasing device densities in ultra-large-scale integrated (ULSI) circuits. Integral in this development has been the replacement of the conventional Al/SiO2 met...
Gespeichert in:
Veröffentlicht in: | Materials today (Kidlington, England) England), 2006-03, Vol.9 (3), p.22-31 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The microelectronics industry is constantly trying to reinvent itself, to find new technological solutions to keep pace with the trend of increasing device densities in ultra-large-scale integrated (ULSI) circuits. Integral in this development has been the replacement of the conventional Al/SiO2 metal and dielectric materials in multilevel interconnect structures. Higher-conductivity Cu has now successfully replaced Al interconnects, but there is still a need for new low dielectric constant (k) materials, as an interlayer dielectric. |
---|---|
ISSN: | 1369-7021 1873-4103 |
DOI: | 10.1016/S1369-7021(06)71387-6 |