Materials chemistry for low-k materials

The microelectronics industry is constantly trying to reinvent itself, to find new technological solutions to keep pace with the trend of increasing device densities in ultra-large-scale integrated (ULSI) circuits. Integral in this development has been the replacement of the conventional Al/SiO2 met...

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Veröffentlicht in:Materials today (Kidlington, England) England), 2006-03, Vol.9 (3), p.22-31
Hauptverfasser: Hatton, Benjamin D., Landskron, Kai, Hunks, William J., Bennett, Mark R., Shukaris, Donna, Perovic, Douglas D., Ozin, Geoffrey A.
Format: Artikel
Sprache:eng
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Zusammenfassung:The microelectronics industry is constantly trying to reinvent itself, to find new technological solutions to keep pace with the trend of increasing device densities in ultra-large-scale integrated (ULSI) circuits. Integral in this development has been the replacement of the conventional Al/SiO2 metal and dielectric materials in multilevel interconnect structures. Higher-conductivity Cu has now successfully replaced Al interconnects, but there is still a need for new low dielectric constant (k) materials, as an interlayer dielectric.
ISSN:1369-7021
1873-4103
DOI:10.1016/S1369-7021(06)71387-6