Domain switching in ferroelectric single crystal/ceramics under electromechanical loading

Domain switching in PMN-PT single crystal and PZT-5 ceramics under electromechanical loading were studied in two different ways. For the single crystal, domain switching was in situ investigated with polarized light microscopy. A 90° domain-switching zone was observed near the crack tip and the size...

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Veröffentlicht in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2005-07, Vol.120 (1), p.119-124
Hauptverfasser: Li, Fa-Xin, Li, Shang, Fang, Dai-Ning
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Sprache:eng
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Zusammenfassung:Domain switching in PMN-PT single crystal and PZT-5 ceramics under electromechanical loading were studied in two different ways. For the single crystal, domain switching was in situ investigated with polarized light microscopy. A 90° domain-switching zone was observed near the crack tip and the size of the switching zone changed with the acuity of the crack tip. For PZT-5 ceramics, domain switching under orthogonal electromechanical loading ( E 3 and compressive stress σ 11) was studied by measuring the hysteresis loops, butterfly curves and reversed butterfly curves ( ɛ 11 versus E 3). Experimental results show that 90° domain switching is suppressed in the planes parallel to the compression direction. A domain-switching model dividing each 180° switching to two successive 90° switching was proposed to explain the experimental results.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2005.02.037