Electron–electron interaction in p-SiGe/Ge quantum wells
The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 × 10 11 cm −2. At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2/Vs), we observe the clear sign...
Gespeichert in:
| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2005-12, Vol.124, p.184-187 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 187 |
|---|---|
| container_issue | |
| container_start_page | 184 |
| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
| container_volume | 124 |
| creator | Rössner, Benjamin von Känel, Hans Chrastina, Daniel Isella, Giovanni Batlogg, Bertram |
| description | The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9
×
10
11
cm
−2. At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000
cm
2/Vs), we observe the clear signatures of electron–electron interaction. We compare our experiment with the theory of electron–electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron–electron interaction effect. |
| doi_str_mv | 10.1016/j.mseb.2005.08.037 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_29383320</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921510705005143</els_id><sourcerecordid>29383320</sourcerecordid><originalsourceid>FETCH-LOGICAL-c331t-a28bef0dc70cb9201956269d0d59ebe52fa15d6db70b60773b806ea900752e413</originalsourceid><addsrcrecordid>eNp9kL9OwzAQhy0EEqXwAkyZ2JKe7SSOEQuqSkGqxADMlu1cJFf509oJiI134A15EhLamel-w-873X2EXFNIKNB8sU2agCZhAFkCRQJcnJAZLQSPU5mmp2QGktE4oyDOyUUIWwCgjLEZuV3VaHvftT9f33iMkWt79Nr27i9Hu_jFrXGxxmg_6LYfmugD6zpckrNK1wGvjnNO3h5Wr8vHePO8flreb2LLOe1jzQqDFZRWgDWSAZVZznJZQplJNJixStOszEsjwOQgBDcF5KglgMgYppTPyc1h7853-wFDrxoX7HiBbrEbgmKSF5wzGIvsULS-C8FjpXbeNdp_Kgpq0qS2atKkJk0KCjVqGqG7A4TjC-8OvQrWYWuxdH7UocrO_Yf_AruXcR0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29383320</pqid></control><display><type>article</type><title>Electron–electron interaction in p-SiGe/Ge quantum wells</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Rössner, Benjamin ; von Känel, Hans ; Chrastina, Daniel ; Isella, Giovanni ; Batlogg, Bertram</creator><creatorcontrib>Rössner, Benjamin ; von Känel, Hans ; Chrastina, Daniel ; Isella, Giovanni ; Batlogg, Bertram</creatorcontrib><description>The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9
×
10
11
cm
−2. At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000
cm
2/Vs), we observe the clear signatures of electron–electron interaction. We compare our experiment with the theory of electron–electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron–electron interaction effect.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/j.mseb.2005.08.037</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Electron–electron interaction ; Hole densities ; Magnetoresistance</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.184-187</ispartof><rights>2005 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-a28bef0dc70cb9201956269d0d59ebe52fa15d6db70b60773b806ea900752e413</citedby><cites>FETCH-LOGICAL-c331t-a28bef0dc70cb9201956269d0d59ebe52fa15d6db70b60773b806ea900752e413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mseb.2005.08.037$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids></links><search><creatorcontrib>Rössner, Benjamin</creatorcontrib><creatorcontrib>von Känel, Hans</creatorcontrib><creatorcontrib>Chrastina, Daniel</creatorcontrib><creatorcontrib>Isella, Giovanni</creatorcontrib><creatorcontrib>Batlogg, Bertram</creatorcontrib><title>Electron–electron interaction in p-SiGe/Ge quantum wells</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9
×
10
11
cm
−2. At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000
cm
2/Vs), we observe the clear signatures of electron–electron interaction. We compare our experiment with the theory of electron–electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron–electron interaction effect.</description><subject>Electron–electron interaction</subject><subject>Hole densities</subject><subject>Magnetoresistance</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kL9OwzAQhy0EEqXwAkyZ2JKe7SSOEQuqSkGqxADMlu1cJFf509oJiI134A15EhLamel-w-873X2EXFNIKNB8sU2agCZhAFkCRQJcnJAZLQSPU5mmp2QGktE4oyDOyUUIWwCgjLEZuV3VaHvftT9f33iMkWt79Nr27i9Hu_jFrXGxxmg_6LYfmugD6zpckrNK1wGvjnNO3h5Wr8vHePO8flreb2LLOe1jzQqDFZRWgDWSAZVZznJZQplJNJixStOszEsjwOQgBDcF5KglgMgYppTPyc1h7853-wFDrxoX7HiBbrEbgmKSF5wzGIvsULS-C8FjpXbeNdp_Kgpq0qS2atKkJk0KCjVqGqG7A4TjC-8OvQrWYWuxdH7UocrO_Yf_AruXcR0</recordid><startdate>20051205</startdate><enddate>20051205</enddate><creator>Rössner, Benjamin</creator><creator>von Känel, Hans</creator><creator>Chrastina, Daniel</creator><creator>Isella, Giovanni</creator><creator>Batlogg, Bertram</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20051205</creationdate><title>Electron–electron interaction in p-SiGe/Ge quantum wells</title><author>Rössner, Benjamin ; von Känel, Hans ; Chrastina, Daniel ; Isella, Giovanni ; Batlogg, Bertram</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-a28bef0dc70cb9201956269d0d59ebe52fa15d6db70b60773b806ea900752e413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Electron–electron interaction</topic><topic>Hole densities</topic><topic>Magnetoresistance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rössner, Benjamin</creatorcontrib><creatorcontrib>von Känel, Hans</creatorcontrib><creatorcontrib>Chrastina, Daniel</creatorcontrib><creatorcontrib>Isella, Giovanni</creatorcontrib><creatorcontrib>Batlogg, Bertram</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rössner, Benjamin</au><au>von Känel, Hans</au><au>Chrastina, Daniel</au><au>Isella, Giovanni</au><au>Batlogg, Bertram</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron–electron interaction in p-SiGe/Ge quantum wells</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2005-12-05</date><risdate>2005</risdate><volume>124</volume><spage>184</spage><epage>187</epage><pages>184-187</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9
×
10
11
cm
−2. At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000
cm
2/Vs), we observe the clear signatures of electron–electron interaction. We compare our experiment with the theory of electron–electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron–electron interaction effect.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mseb.2005.08.037</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0921-5107 |
| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.184-187 |
| issn | 0921-5107 1873-4944 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29383320 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Electron–electron interaction Hole densities Magnetoresistance |
| title | Electron–electron interaction in p-SiGe/Ge quantum wells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T02%3A44%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron%E2%80%93electron%20interaction%20in%20p-SiGe/Ge%20quantum%20wells&rft.jtitle=Materials%20science%20&%20engineering.%20B,%20Solid-state%20materials%20for%20advanced%20technology&rft.au=R%C3%B6ssner,%20Benjamin&rft.date=2005-12-05&rft.volume=124&rft.spage=184&rft.epage=187&rft.pages=184-187&rft.issn=0921-5107&rft.eissn=1873-4944&rft_id=info:doi/10.1016/j.mseb.2005.08.037&rft_dat=%3Cproquest_cross%3E29383320%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29383320&rft_id=info:pmid/&rft_els_id=S0921510705005143&rfr_iscdi=true |