Modelling of real space transfer optical emitters

In this paper we report on numerical modelling and optimisation of a novel heterojunction optical light emitter based on longitudinal transport of the electrons and holes. The real‐space‐transfer of the carriers into the quantum well takes place due to variation of the reverse and forward biased reg...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2007-02, Vol.204 (2), p.531-535
Hauptverfasser:	Hepburn, C. J., Zakhleniuk, N. A., Adams, M. J., Balkan, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	72.20.Ht 72.20.Jv 78.20.Bh 85.60.Jb Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	In this paper we report on numerical modelling and optimisation of a novel heterojunction optical light emitter based on longitudinal transport of the electrons and holes. The real‐space‐transfer of the carriers into the quantum well takes place due to variation of the reverse and forward biased regions with applied longitudinal bias. We show that by altering individual features of the device we can achieve an increase in optical power of nearly 430 times that of the original device. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6300 0031-8965 1862-6319
DOI:	10.1002/pssa.200673350