High-Performance All-Polymer Transistor Utilizing a Hygroscopic Insulator

High-Performance All-Polymer Transistor Utilizing a Hygroscopic Insulator

An organic transistor is presented, showing a one‐hundred‐fold increase in current level at operating voltages around 1 V and excellent current modulation (see Figure) resulting from the ionic effects present in the hygroscopic insulator when operated in ambient atmosphere.

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Veröffentlicht in:Advanced materials (Weinheim) 2004-07, Vol.16 (13), p.1112-1115
Hauptverfasser: Sandberg, H. G. O., Bäcklund, T. G., Österbacka, R., Stubb, H.
Format: Artikel
Sprache:eng
Schlagworte:
Field-effect transistors
Field‐effect transistors, organic
Hygroscopic materials
organic
Poly(3-hexylthiophene)
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Beschreibung
Zusammenfassung:An organic transistor is presented, showing a one‐hundred‐fold increase in current level at operating voltages around 1 V and excellent current modulation (see Figure) resulting from the ionic effects present in the hygroscopic insulator when operated in ambient atmosphere.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200400030