Magnetic phase diagram of the mixed-valence semiconductor TmSe under multi-extreme ( P , H , T ) conditions

Magnetic phase diagram of the mixed-valence semiconductor TmSe under multi-extreme ( P , H , T ) conditions

The high-pressure (type-II) antiferromagnetic phase of the mixed-valence semiconductor TmSe has been studied by neutron diffraction at P = 4.1 GPa in high magnetic fields. Surprisingly, the phase diagram reveals the existence, above 1.6 T, of an AF I phase reminiscent of the ambient-pressure, zero-f...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2005-04, Vol.359, p.105-107
Hauptverfasser: Mignot, Jean-Michel, Goncharenko, Igor N., Matsumura, Takeshi, Suzuki, Takashi
Format: Artikel
Sprache:eng
Schlagworte:
High pressure
Kondo insulators
Mixed valence
Neutron diffraction
Thulium monochalcogenides
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Zusammenfassung:The high-pressure (type-II) antiferromagnetic phase of the mixed-valence semiconductor TmSe has been studied by neutron diffraction at P = 4.1 GPa in high magnetic fields. Surprisingly, the phase diagram reveals the existence, above 1.6 T, of an AF I phase reminiscent of the ambient-pressure, zero-field structure. This result provides a new opportunity to investigate the relationship between magnetic and electronic structures in Tm monochalcogenides.
ISSN:0921-4526
DOI:10.1016/j.physb.2005.01.004