Magnetism in n-type GaMnN grown by molecular beam epitaxy

We investigate the magnetic properties of a strongly n‐type GaMnN alloy grown by molecular beam epitaxy. Transport, X‐ray diffraction, and magnetic characterizations are presented. The carrier concentration and mobility obtained by Hall effect measurements are nearly constant with respect to temperature over the entire temperature range from 4 K to 300 K. Magnetometry data indicates a transition temperature at approximately 170 K with hysteresis measurements indicating magnetic behavior at least to 300 K. The role of alloy microstructure is investigated using X‐ray diffraction and shows the possible presence of alternate phases giving rise to magnetization. In transport, we observe a linear Hall effect dependence on magnetic field strength. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)