MgxZn1-xO films grown by remote-plasma-enhanced MOCVD with EtCp2Mg
MgxZn1-xO films were successfully grown by remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD) with bis-ethylcyclopentadienyl magnesium (EtCp2Mg). Mg content x in MgxZn1-xO films was controlled by varying the growth temperature and the radio-frequency (RF) power. The Mg content...
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| Veröffentlicht in: | Journal of crystal growth 2007, Vol.298, p.468-471 |
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| container_end_page | 471 |
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| container_start_page | 468 |
| container_title | Journal of crystal growth |
| container_volume | 298 |
| creator | YAMAMOTO, K ENOMOTO, K NAKAMURA, A AOKI, T TEMMYO, J |
| description | MgxZn1-xO films were successfully grown by remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD) with bis-ethylcyclopentadienyl magnesium (EtCp2Mg). Mg content x in MgxZn1-xO films was controlled by varying the growth temperature and the radio-frequency (RF) power. The Mg content x in wurtzite-MgxZn1-xO films slightly increased around 0.07 with increasing the growth temperature from 400 to 600 deg C. At 700 deg C, MgxZn1-xO films had wurtzite and rock-salt structure, and Mg content increased to 0.42. Mg content x in wurtzite-MgxZn1-xO films decreased from 0.25 to 0.09 with increasing RF power from 20 to 70W. And MgxZn1-xO films grown between 0 and 10W had amorphous structure. |
| doi_str_mv | 10.1016/j.jcrysgro.2006.10.057 |
| format | Article |
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| ispartof | Journal of crystal growth, 2007, Vol.298, p.468-471 |
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| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Theory and models of film growth |
| title | MgxZn1-xO films grown by remote-plasma-enhanced MOCVD with EtCp2Mg |
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