MgxZn1-xO films grown by remote-plasma-enhanced MOCVD with EtCp2Mg

MgxZn1-xO films were successfully grown by remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD) with bis-ethylcyclopentadienyl magnesium (EtCp2Mg). Mg content x in MgxZn1-xO films was controlled by varying the growth temperature and the radio-frequency (RF) power. The Mg content x in wurtzite-MgxZn1-xO films slightly increased around 0.07 with increasing the growth temperature from 400 to 600 deg C. At 700 deg C, MgxZn1-xO films had wurtzite and rock-salt structure, and Mg content increased to 0.42. Mg content x in wurtzite-MgxZn1-xO films decreased from 0.25 to 0.09 with increasing RF power from 20 to 70W. And MgxZn1-xO films grown between 0 and 10W had amorphous structure.