Time-resolved Spectroscopy of the violet luminescence of undoped AlN

Time-resolved Spectroscopy of the violet luminescence of undoped AlN

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor p...

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Veröffentlicht in:MRS Internet journal of nitride semiconductor research 2005-01, Vol.10, p.1-1, Article e3
Hauptverfasser: Freitag, R, Thonke, K, Sauer, R, Ebling, D G, Steinke, L
Format: Artikel
Sprache:eng
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Zusammenfassung:We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.
ISSN:1092-5783
1092-5783
DOI:10.1557/S1092578300000545