Thermal equation of state of cubic silicon carbide at high pressures
We have performed in situ X-ray diffraction measurements of cubic silicon carbide (SiC) with a zinc-blende crystal structure (B3) at high pressures and temperatures using multi-anvil apparatus. The ambient volume inferred from the compression curves is smaller than that of the starting material. Usi...
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Veröffentlicht in: | Chemphyschem 2024-05, Vol.25 (9), p.e202300604-e202300604 |
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Sprache: | eng |
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Zusammenfassung: | We have performed in situ X-ray diffraction measurements of cubic silicon carbide (SiC) with a zinc-blende crystal structure (B3) at high pressures and temperatures using multi-anvil apparatus. The ambient volume inferred from the compression curves is smaller than that of the starting material. Using the 3
-order Birch-Murnaghan equation of state and the Mie-Grüneisen-Debye model, we have determined the thermoelastic parameters of the B3-SiC to be K
=228±3 GPa, K
',=4.4±0.4, q=0.27±0.37, where K
, K
' and q are the isothermal bulk modulus, its pressure derivative and logarithmic volume dependence of the Grüneisen parameter, respectively. Using the 3
-order Birch-Murnaghan EOS with the thermal expansion coefficient, the thermoelastic parameters have been found as K
=221±3 GPa, K
',=5.2±0.4, α
=0.90±0.02 ⋅ 10
⋅ K
, where α
is the thermal expansion coefficient at room pressure and temperature. We have determined that paired B3-SiC - MgO calibrants can be used to estimate pressure and temperature simultaneously in ultrahigh-pressure experiments up to 60 GPa. |
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ISSN: | 1439-4235 1439-7641 |
DOI: | 10.1002/cphc.202300604 |