A Model of Copper CMP

A model of copper chemical mechanical polishing (CMP) based on methods of chemical kinetics is presented which includes both chemical and mechanical processes. This CMP model explains observed patterns in removal rates for peroxide and nonperoxidebased slurries as a function of oxidizer concentratio...

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Veröffentlicht in:	Journal of the Electrochemical Society 2005-01, Vol.152 (4), p.G322-G328
Hauptverfasser:	Paul, Ed, Kaufman, Frank, Brusic, Vlasta, Zhang, Jian, Sun, Fred, Vacassy, Robert
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A model of copper chemical mechanical polishing (CMP) based on methods of chemical kinetics is presented which includes both chemical and mechanical processes. This CMP model explains observed patterns in removal rates for peroxide and nonperoxidebased slurries as a function of oxidizer concentration, polishing pressure and speed, etchant concentration, and pH.
ISSN:	0013-4651
DOI:	10.1149/1.1861175