Electrically conducting Bi cluster-assembled wires formed using SiN nanostencils

This paper describes the selective deposition of clusters through nanoscale aperture-slots to form conducting cluster-assembled wires. PMMA coated SiN membranes featuring reactive ion etched aperture-slots were aligned over planar Ti/Au contacts on passivated Si substrates and then placed in the deposition chamber of an inert gas aggregation cluster deposition system. Bi clusters were deposited through the aperture-slots onto the contacted substrates. The contact-to-contact conduction was monitored throughout the cluster deposition process and a sharp increase in the conduction between the contacts indicated completion of a cluster-assembled wire. Whilst the Bi clusters adhere to SiN and Au layers, they are reflected from the PMMA coated membrane thus eliminating the possibility of accumulation within the aperture-slots. Conducting Bi wires with lengths up to 100 μm and widths down to 400 nm have been produced.