Aluminium doping induced enhancement of p–d coupling in ZnO

Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d state...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of physics. Condensed matter 2006-03, Vol.18 (11), p.3081-3087
Hauptverfasser:	Cong, G W, Peng, W Q, Wei, H Y, Liu, X L, Wu, J J, Han, X X, Zhu, Q S, Wang, Z G, Ye, Z Z, Lu, J G, Zhu, L P, Qian, H J, Su, R, Hong, C H, Zhong, J, Ibrahim, K, Hu, T D
Format:	Artikel
Sprache:	eng
Schlagworte:	Clean metal, semiconductor, and insulator surfaces Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron and ion emission by liquids and solids impact phenomena Electron density of states and band structure of crystalline solids Electron states Exact sciences and technology Photoemission and photoelectron spectra Physics Semiconductor compounds
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!