Aluminium doping induced enhancement of p–d coupling in ZnO

Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d state...

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Veröffentlicht in:Journal of physics. Condensed matter 2006-03, Vol.18 (11), p.3081-3087
Hauptverfasser: Cong, G W, Peng, W Q, Wei, H Y, Liu, X L, Wu, J J, Han, X X, Zhu, Q S, Wang, Z G, Ye, Z Z, Lu, J G, Zhu, L P, Qian, H J, Su, R, Hong, C H, Zhong, J, Ibrahim, K, Hu, T D
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Sprache:eng
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Zusammenfassung:Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the O 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and O K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/18/11/013