Aluminium doping induced enhancement of p–d coupling in ZnO
Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d state...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2006-03, Vol.18 (11), p.3081-3087 |
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| container_title | Journal of physics. Condensed matter |
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| creator | Cong, G W Peng, W Q Wei, H Y Liu, X L Wu, J J Han, X X Zhu, Q S Wang, Z G Ye, Z Z Lu, J G Zhu, L P Qian, H J Su, R Hong, C H Zhong, J Ibrahim, K Hu, T D |
| description | Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the O 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and O K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling. |
| doi_str_mv | 10.1088/0953-8984/18/11/013 |
| format | Article |
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Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the O 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and O K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.</description><identifier>ISSN: 0953-8984</identifier><identifier>EISSN: 1361-648X</identifier><identifier>DOI: 10.1088/0953-8984/18/11/013</identifier><identifier>CODEN: JCOMEL</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Clean metal, semiconductor, and insulator surfaces ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron and ion emission by liquids and solids; impact phenomena ; Electron density of states and band structure of crystalline solids ; Electron states ; Exact sciences and technology ; Photoemission and photoelectron spectra ; Physics ; Semiconductor compounds</subject><ispartof>Journal of physics. 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Condensed matter</title><description>Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the O 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and O K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.</description><subject>Clean metal, semiconductor, and insulator surfaces</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>Electron density of states and band structure of crystalline solids</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Photoemission and photoelectron spectra</subject><subject>Physics</subject><subject>Semiconductor compounds</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kL1OwzAURi0EEqXwBCxeYEBKY8excz0wVBV_UqUuICEWy3UcMEqcEDcDG-_AG_IkJEpVBhDTHe75Pt17EDqlZEYJQEwkZxFISGMKMaUxoWwPTSgTNBIpPO6jyY44REchvBJCUmDpBF3Oy65y3nUVzuvG-WfsfN4Zm2PrX7Q3trJ-g-sCN18fnzk2ddeUI4Wf_OoYHRS6DPZkO6fo4frqfnEbLVc3d4v5MjIM0k1kCp1Jaw3ngmSMSGBCcMIzWmSwTgjkNKUcpNaGMMlNZhLBhYZUrC3wPLNsis7H3qat3zobNqpywdiy1N7WXVCJZEywhPUgG0HT1iG0tlBN6yrdvitK1KBKDSLUIEJRUJSqXlWfOtvW62B0WbT94y78RDMuAWDgLkbO1c1u-0ehavKih2e_4f-u-AZGYoMz</recordid><startdate>20060322</startdate><enddate>20060322</enddate><creator>Cong, G W</creator><creator>Peng, W Q</creator><creator>Wei, H Y</creator><creator>Liu, X L</creator><creator>Wu, J J</creator><creator>Han, X X</creator><creator>Zhu, Q S</creator><creator>Wang, Z G</creator><creator>Ye, Z Z</creator><creator>Lu, J G</creator><creator>Zhu, L P</creator><creator>Qian, H J</creator><creator>Su, R</creator><creator>Hong, C H</creator><creator>Zhong, J</creator><creator>Ibrahim, K</creator><creator>Hu, T D</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20060322</creationdate><title>Aluminium doping induced enhancement of p–d coupling in ZnO</title><author>Cong, G W ; Peng, W Q ; Wei, H Y ; Liu, X L ; Wu, J J ; Han, X X ; Zhu, Q S ; Wang, Z G ; Ye, Z Z ; Lu, J G ; Zhu, L P ; Qian, H J ; Su, R ; Hong, C H ; Zhong, J ; Ibrahim, K ; Hu, T D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-cfa79eec55607309836650571f78b208d141589aac0395c7c2656a846be85d7e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Clean metal, semiconductor, and insulator surfaces</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>Electron density of states and band structure of crystalline solids</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Photoemission and photoelectron spectra</topic><topic>Physics</topic><topic>Semiconductor compounds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cong, G W</creatorcontrib><creatorcontrib>Peng, W Q</creatorcontrib><creatorcontrib>Wei, H Y</creatorcontrib><creatorcontrib>Liu, X L</creatorcontrib><creatorcontrib>Wu, J J</creatorcontrib><creatorcontrib>Han, X X</creatorcontrib><creatorcontrib>Zhu, Q S</creatorcontrib><creatorcontrib>Wang, Z G</creatorcontrib><creatorcontrib>Ye, Z Z</creatorcontrib><creatorcontrib>Lu, J G</creatorcontrib><creatorcontrib>Zhu, L P</creatorcontrib><creatorcontrib>Qian, H J</creatorcontrib><creatorcontrib>Su, R</creatorcontrib><creatorcontrib>Hong, C H</creatorcontrib><creatorcontrib>Zhong, J</creatorcontrib><creatorcontrib>Ibrahim, K</creatorcontrib><creatorcontrib>Hu, T D</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. 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| subjects | Clean metal, semiconductor, and insulator surfaces Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron and ion emission by liquids and solids impact phenomena Electron density of states and band structure of crystalline solids Electron states Exact sciences and technology Photoemission and photoelectron spectra Physics Semiconductor compounds |
| title | Aluminium doping induced enhancement of p–d coupling in ZnO |
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