Mechanism of Ni Film CVD with a Ni(ktfaa)2 Precursor on a Copper Substrate

The mechanisms of pyrolysis in He and reduction in H2 of a Ni(ktfaa)2 chelate and nickel film deposition on copper substrates are discussed. The Ni films produced by CVD with the Ni(ktfaa)2 chelate as a precursor are continuous. Pyrolysis of the Ni(ktfaa)2 chelate takes place above 300 °C. The hydrogen atmosphere allows the reaction temperature to be decreased to 213 °C, but the film deposition rate is low. 300 °C is the optimal temperature for continuous Ni film deposition on Cu substrates. The mechanism of hydrogen interaction with the adsorbed Ni(ktfaa)2 chelate is discussed. Thin films of Ni are deposited on Cu substrates by CVD in the temperature region 250–350 °C using a Ni(ktfaa)2 chelate precursor. At about 300 °C chelate pyrolysis takes place on the surface of Cu and in the gas phase. This temperature is the highest limit for CVD nickel films. Thermal analysis indicates that in the presence of hydrogen the CVD for nickel films might be decreased to 213 °C. In the temperature region 250–300 °C the Ni films are continuous, with good adhesion to a Cu substrate.