Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMs

We report on the modeling and characterization of the memory effect observed on triple-well nMOSFETs. First, the mechanisms of charge injection, localization and retention in the floating p-well of triple-well nMOSFETs are investigated and a new model is proposed. Then several electrical characteriz...

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Veröffentlicht in:	Microelectronic engineering 2004-04, Vol.72 (1), p.434-439
Hauptverfasser:	Villaret, A., Ranica, R., Masson, P., Malinge, P., Mazoyer, P., Candelier, P., Jacquet, F., Cristoloveanu, S., Skotnicki, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Dielectric, amorphous and glass solid devices Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We report on the modeling and characterization of the memory effect observed on triple-well nMOSFETs. First, the mechanisms of charge injection, localization and retention in the floating p-well of triple-well nMOSFETs are investigated and a new model is proposed. Then several electrical characterization set-ups are discussed. Finally, modeled and measured data are compared at room temperature.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2004.01.026