Microstructure and Composition of Focused-Ion-Beam-Deposited Pt Contacts to GaN Nanowires

Characterization of focused ion beam (FIB)‐deposited Pt contacts to GaN nanowires (see Figure, green) shows that these contacts contain high densities of Pt nanocrystallites (red) embedded in an amorphous C + Ga matrix (purple). Regions with lower Pt nanocrystallite densities (light blue) have also been found. Sputter damage generally removes the top of the GaN layer, leaving a disordered region below. These observations suggest reasons for the unusually low resistance of FIB‐deposited Pt contacts to GaN nanowires.