Growth of dilute GaNSb by plasma-assisted MBE

Using plasma-assisted molecular beam epitaxy (MBE), GaN x Sb 1− x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460 °C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These material...

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Veröffentlicht in:	Journal of crystal growth 2005-05, Vol.278 (1), p.188-192
Hauptverfasser:	Buckle, L., Bennett, B.R., Jollands, S., Veal, T.D., Wilson, N.R., Murdin, B.N., McConville, C.F., Ashley, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Doping A1. X-ray diffraction A3. Molecular beam epitaxy B1. Antimonides B2. Semiconducting gallium compounds B2. Semiconducting III–V materials Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Using plasma-assisted molecular beam epitaxy (MBE), GaN x Sb 1− x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310–460 °C). The films showed excellent crystalline quality and a nitrogen incorporation of 0–1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2–4 μm range.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2004.12.148