The contribution of grain boundary and defects to the resistivity in the ferromagnetic state of polycrystalline manganites
In the present study we report the precise resistivity measurements for the polycrystalline bulk sample as well as highly oriented thin-films of La 0.8Ca 0.2MnO 3. The poly crystalline sample was prepared by standard solid-state reaction route and the oriented thin film was prepared by pulsed laser...
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Veröffentlicht in: | Journal of magnetism and magnetic materials 2006-11, Vol.306 (1), p.60-68 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In the present study we report the precise resistivity measurements for the polycrystalline bulk sample as well as highly oriented thin-films of La
0.8Ca
0.2MnO
3. The poly crystalline sample was prepared by standard solid-state reaction route and the oriented thin film was prepared by pulsed laser deposition (PLD). The phase purity of these samples was confirmed by X-ray diffraction and the back-scattered electron imaging using scanning electron microscopy (SEM). The oxygen stoichiometry analysis was done by iodimetry titration. The resistivities of these samples were carried out with four-probe resistivity measurement setup. The observed temperature dependence of resistivity data for both the samples was fitted using the polaron model. We have found that polaronic model fits well with the experimental data of both polycrystalline and single crystal samples. A new phenomenological model is proposed and used to estimate contribution to the resistivity due to grain boundary in the ferromagnetic state of polycrystalline manganites and it has been shown that the scattering of electrons from the grain boundary (grain surface) is a function of temperature and controlled by the effective grain resistance at that temperature. |
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ISSN: | 0304-8853 |
DOI: | 10.1016/j.jmmm.2006.02.106 |