Electron spin dynamics in GaAsN and InGaAsN structures

We report on optical orientation experiments in undoped GaAsN epilayers and InGaAsN quantum wells (QW), showing that a strong electron spin polarisation can persist at room temperature. We demonstrate that the spin dynamics in these dilute nitride structures is governed by a spin‐dependent recombina...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2007-01, Vol.204 (1), p.208-220
Hauptverfasser:	Lagarde, D., Lombez, L., Marie, X., Balocchi, A., Amand, T., Kalevich, V. K., Shiryaev, A., Ivchenko, E., Egorov, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	72.20.Jv 72.25.Fe 72.25.Rb 78.47.+p 78.55.cr 78.67.De
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We report on optical orientation experiments in undoped GaAsN epilayers and InGaAsN quantum wells (QW), showing that a strong electron spin polarisation can persist at room temperature. We demonstrate that the spin dynamics in these dilute nitride structures is governed by a spin‐dependent recombination process of free conduction electrons on deep paramagnetic centres. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6300 0031-8965 1862-6319
DOI:	10.1002/pssa.200673009