High-Tc metal oxide as Mott-Hubbard unstable paraelectric: temperature dependence of resistivity and Hall effect
The model of the paraelectric, which is close to the point of the Mott-Hubbard instability, is shown to explain the DC resistivity and Hall effect temperature behaviour for high-Tc superconductor metal oxides (HTSC). In the ground state the current is carried by a liquid of boson-like pairs of carri...
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Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2005-04, Vol.359-361, p.551-553 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The model of the paraelectric, which is close to the point of the Mott-Hubbard instability, is shown to explain the DC resistivity and Hall effect temperature behaviour for high-Tc superconductor metal oxides (HTSC). In the ground state the current is carried by a liquid of boson-like pairs of carriers in upper and lower Hubbard bands. The Mott-Hubbard instability corresponds to the order-of-lattice-constant length of the mean free path and results in the temperature insensitivity of Drude conductivity. Nearly linear on T resistivity results from the Curie law via the local (acting) electric field. Fermion-like carriers, temperature excited over the energy of boson-like pair dissociation (pseudogap), explain the temperature behaviour of Hall effect. Available data are compared with the model. |
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ISSN: | 0921-4526 |
DOI: | 10.1016/j.physb.2005.01.157 |