High-Tc metal oxide as Mott-Hubbard unstable paraelectric: temperature dependence of resistivity and Hall effect

The model of the paraelectric, which is close to the point of the Mott-Hubbard instability, is shown to explain the DC resistivity and Hall effect temperature behaviour for high-Tc superconductor metal oxides (HTSC). In the ground state the current is carried by a liquid of boson-like pairs of carri...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2005-04, Vol.359-361, p.551-553
Hauptverfasser: Golovashkin, A I, Karuzskii, A L, Lykov, A N, Murzin, V N, Perestoronin, A V, Shchurova, L Yu
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The model of the paraelectric, which is close to the point of the Mott-Hubbard instability, is shown to explain the DC resistivity and Hall effect temperature behaviour for high-Tc superconductor metal oxides (HTSC). In the ground state the current is carried by a liquid of boson-like pairs of carriers in upper and lower Hubbard bands. The Mott-Hubbard instability corresponds to the order-of-lattice-constant length of the mean free path and results in the temperature insensitivity of Drude conductivity. Nearly linear on T resistivity results from the Curie law via the local (acting) electric field. Fermion-like carriers, temperature excited over the energy of boson-like pair dissociation (pseudogap), explain the temperature behaviour of Hall effect. Available data are compared with the model.
ISSN:0921-4526
DOI:10.1016/j.physb.2005.01.157