Electrical current suppression mechanism in Bi-2212 bulk obtained by partial melting processing

Partial melting technique consists of peritectic melting and solidification of Bi-2212 phase. This technique has been applied in two temperature ranges of the Ca poor part of the Bi 2.20Sr 3− y Ca y Cu 2O 8+ Δ system phase diagram, both involving multi-phase regions, with the aim of preparing bulk a...

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Veröffentlicht in:Physica. C, Superconductivity Superconductivity, 2004-08, Vol.408, p.34-36
Hauptverfasser: Marinkovic, B.A., Xia, S., Serra, E.T., Borges, H.A., Hering, E., Rizzo, F.
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Sprache:eng
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Zusammenfassung:Partial melting technique consists of peritectic melting and solidification of Bi-2212 phase. This technique has been applied in two temperature ranges of the Ca poor part of the Bi 2.20Sr 3− y Ca y Cu 2O 8+ Δ system phase diagram, both involving multi-phase regions, with the aim of preparing bulk and dense Bi-2212 phase. Microstructural and intrinsic physical parameters which could act as potential suppression mechanisms of the electric transport properties of bulk Bi-2212 have been discussed.
ISSN:0921-4534
1873-2143
DOI:10.1016/j.physc.2004.02.025