Selectively etched tunnel junction for lateral current and optical confinement in InP-based vertical cavity lasers

We demonstrate a thin, selectively lateral-etched, Alln(Ga)As tunnel junction (TJ) layer as a current and optical confinement aperture in the InP-based long-wavelength vertical cavity surface-emitting lasers (VCSELs). A high etch selectivity was demonstrated by etching the aperture a distance of sev...

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Veröffentlicht in:	Journal of electronic materials 2004-02, Vol.33 (2), p.118-122, Article 118
Hauptverfasser:	REDDY, M. H. M, ASANO, T, FEEZELL, D, BUELL, D. A, HUNTINGTON, A. S, KODA, R, COLDREN, L. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes Tunneling
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Zusammenfassung:	We demonstrate a thin, selectively lateral-etched, Alln(Ga)As tunnel junction (TJ) layer as a current and optical confinement aperture in the InP-based long-wavelength vertical cavity surface-emitting lasers (VCSELs). A high etch selectivity was demonstrated by etching the aperture a distance of several microns without affecting the surrounding InP etch-resistant layer. Edge-emitting lasers enclosing the TJ aperture showed high injection efficiency and low current spreading underneath the aperture. Single-mode continuous-wave operation of a 1.55-mum VCSEL was demonstrated successfully with a room-temperature differential efficiency of 21% using a 6-mm-wide TJ aperture.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-004-0280-x