Emergent Dirac Fermions in Epitaxial Planar Silicene Heterostructure

Silicene, a single layer of Si atoms, shares many remarkable electronic properties with graphene. So far, silicene has been synthesized in its epitaxial form on a few surfaces of solids. Thus, the problem of silicene–substrate interaction appears, which usually depresses the original electronic beha...

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Veröffentlicht in:Nano letters 2024-02, Vol.24 (7), p.2175-2180
Hauptverfasser: Kopciuszyński, Marek, Stȩpniak-Dybala, Agnieszka, Zdyb, Ryszard, Krawiec, Mariusz
Format: Artikel
Sprache:eng
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Zusammenfassung:Silicene, a single layer of Si atoms, shares many remarkable electronic properties with graphene. So far, silicene has been synthesized in its epitaxial form on a few surfaces of solids. Thus, the problem of silicene–substrate interaction appears, which usually depresses the original electronic behavior but may trigger properties superior to those of bare components. We report the direct observation of robust Dirac-dispersed bands in epitaxial silicene grown on Au(111) films deposited on Si(111). By performing in-depth angle-resolved photoemission spectroscopy measurements, we reveal three pairs of one-dimensional bands with linear dispersion running in three different directions of an otherwise two-dimensional system. By combining these results with first-principles calculations, we explore the nature of these bands and point to strong interaction between subsystems forming a complex Si–Au heterostructure. These findings emphasize the essential role of interfacial coupling and open a unique materials platform for exploring exotic quantum phenomena and applications in future-generation nanoelectronics.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.3c04046