Highly a-axis oriented γ-LiAlO2 layer on a-plane sapphire fabricated by vapor transport equilibration

A single‐phase γ‐LiAlO2 layer with a highly‐preferred (100) orientation on $ (11 \bar 20) $ sapphire substrate is successfully fabricated by vapor transport equilibration (VTE) technique in Li‐rich ambient. The VTE treatment temperature is essential to obtaining the high‐quality layer of γ‐LiAlO2, and the optimized temperature is about 1050 °C in the present work. It is promising to fabricate the γ‐LIAlO2(100)//sapphire $ (11\bar 20) $ composite substrate for GaN‐based epitaxial film. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)