High-Temperature Resistance Anomaly at a Strontium Titanate Grain Boundary and Its Correlation with the Grain-Boundary Faceting-Defaceting Transition

High-Temperature Resistance Anomaly at a Strontium Titanate Grain Boundary and Its Correlation with the Grain-Boundary Faceting-Defaceting Transition

A correlation between a grain‐boundary structural transition and a change in electrical properties is demonstrated, using a SrTiO3 bicrystalline grain boundary as a model system. A grain‐boundary faceting–defaceting transition is seen between 1500 and 1600 °C (the grain‐boundary of the bicrystal ann...

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Veröffentlicht in:Advanced materials (Weinheim) 2007-02, Vol.19 (3), p.391-395
Hauptverfasser: Lee, S. B., Lee, J.-H., Cho, P.-S., Kim, D.-Y., Sigle, W., Phillipp, F.
Format: Artikel
Sprache:eng
Schlagworte:
Crystal defects
Crystal structures
Grain boundaries
Titanium oxides
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Zusammenfassung:A correlation between a grain‐boundary structural transition and a change in electrical properties is demonstrated, using a SrTiO3 bicrystalline grain boundary as a model system. A grain‐boundary faceting–defaceting transition is seen between 1500 and 1600 °C (the grain‐boundary of the bicrystal annealed at 1600 °C for one day is shown in the figure) accompanied by an abrupt change in grain‐boundary electrical impedance.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200602153