Integration of semiconductor and ceramic superconductor devices for microwave applications

Due to the very-low-loss properties of ceramic superconductors, high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature facilitates integration with semiconductor devices. Examples are bandpass amplifiers, microwav...

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Veröffentlicht in:	IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) 1991-03, Vol.27 (2), p.2821-2823
Hauptverfasser:	Klopman, B.B.G., Weijers, H.W., Gao, J., Gerritsma, G.J., Rogalla, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	AMPLIFIERS ARSENIC COMPOUNDS ARSENIDES Band pass filters CAVITY RESONATORS CERAMICS Circuits CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY DESIGN ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES ELECTROMAGNETIC RADIATION ELECTRONIC CIRCUITS ELECTRONIC EQUIPMENT FIELD EFFECT TRANSISTORS FLUXMETERS GALLIUM ARSENIDES GALLIUM COMPOUNDS INTEGRATED CIRCUITS JUNCTIONS MEASURING INSTRUMENTS MICROELECTRONIC CIRCUITS MICROWAVE AMPLIFIERS MICROWAVE EQUIPMENT Microwave filters MICROWAVE RADIATION MOS TRANSISTORS MOSFET Nitrogen PHYSICAL PROPERTIES PNICTIDES PREAMPLIFIERS RADIATIONS Resonator filters RESONATORS SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS SQUID DEVICES SUPERCONDUCTING CAVITY RESONATORS SUPERCONDUCTING DEVICES Superconducting filters SUPERCONDUCTING JUNCTIONS Superconducting microwave devices SUPERCONDUCTIVITY TRANSISTORS 665412 > Superconducting Devices-- (1992-)
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Beschreibung
Zusammenfassung:	Due to the very-low-loss properties of ceramic superconductors, high-performance microwave resonators and filters can be realized. The fact that these devices may be operated at liquid nitrogen temperature facilitates integration with semiconductor devices. Examples are bandpass amplifiers, microwave-operated SQUIDs combined with GaAs preamplifiers, detectors, and MOSFET low-frequency amplifiers. The design of such circuits on a single 1-in alumina substrate using surface mount techniques is discussed. Data on circuits are presented.
ISSN:	0018-9464 1941-0069
DOI:	10.1109/20.133796