Growth of Praseodymium Oxide Thin Films by Liquid Injection MOCVD Using a Novel Praseodymium Alkoxide Precursor

Praseodymium oxide thin films are prepared using a new volatile precursor (for structure of precursor LiCl complex, see Figure) by liquid injection MOCVD. The oxide, a wide‐bandgap (3.9 eV) and high‐κ material, which is currently being investigated as a possible alternative to SiO2 films in silicon‐...

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Veröffentlicht in:	Chemical vapor deposition 2003-10, Vol.9 (5), p.235-238
Hauptverfasser:	Aspinall, H.C., Gaskell, J., Williams, P.A., Jones, A.C., Chalker, P.R., Marshall, P.A., Bickley, J.F., Smith, L.M., Critchlow, G.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	alkoxide Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Lanthanides Liquid-injection MOCVD Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Praseodymium oxides Precursors Precursors, alkoxide Rare earth oxides
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Beschreibung
Zusammenfassung:	Praseodymium oxide thin films are prepared using a new volatile precursor (for structure of precursor LiCl complex, see Figure) by liquid injection MOCVD. The oxide, a wide‐bandgap (3.9 eV) and high‐κ material, which is currently being investigated as a possible alternative to SiO2 films in silicon‐based field‐effect transistors, is deposited from [Pr(mmp)3] (mmp = OCMe2CH2OMe) in the presence of oxygen over the temperature range 350–600 °C.
ISSN:	0948-1907 1521-3862
DOI:	10.1002/cvde.200304160