Charge Puddles Driven Complex Crossover of Magnetoresistance in Non‐Topological Sulfur Doped Antimony Selenide Nanowires

A race to achieve a crossover from positive to negative magnetoresistance is intense in the field of nanostructured materials to reduce the size of memory devices. Here, the unusual complex magnetoresistance in nonmagnetic sulfur‐doped Sb2Se3 nanowires is demonstrated. Intentionally, sulfur is doped in such a way to nearly achieve the charge neutrality point that is evident from switching of carrier type from p‐type to n‐type at 13 K as inferred from the low‐temperature thermoelectric power measurements. A change from 3D variable range hopping (VRH) to power law transport with α = 0.18 in resistivity measurement signifies a Luttinger liquid transport with weak links through the nanowires. Interestingly, high magnetic field induced negative magnetoresistance (NMR) occurring in hole dominated temperature regimes can only be explained by invoking the concept of charge puddles. Spot energy dispersive spectroscopy (EDS), magnetic force microscopy (MFM) measurements, Tmott and Regel plot indicate an enhanced disorder in these sulfurized nanowires that are found to be the precursor for the formation of these charge puddles. Tunability of conducting states in these nanowires is investigated in the light of interplay of carrier type, magnetic field, temperature, and intricate intra‐inter wire transport that makes this nanowires potential for large scale spintronic devices. A complex crossover in magnetoresistance is observed and investigated in sulfur‐doped nanowires synthesized by microwave assisted solvothermal reaction. The role of charge puddles and tunability of conducting states in these nanowires is discussed as an interplay between carrier type, magnetic field, temperature, and intricate intra‐inter wire transport that makes these nanowires potentially suitable for large‐scale spintronic devices.