Growth of RuSr2GdCu2O8 films by post-annealing of pulsed laser deposited precursors

Epitaxial RuSr2GdCu2O8 (Ru-1212) films have been synthesized by post-annealing of precursor films prepared by pulsed laser deposition (PLD). Two types of the precursors, i.e. chemically homogeneous and multilayered chemically structured, have been used. Nearly single phase (00l) oriented Ru-1212 fil...

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Veröffentlicht in:Physica. C, Superconductivity Superconductivity, 2004-12, Vol.417 (1-2), p.50-57
Hauptverfasser: MATVEEV, A. T, CRISTIANI, G, SADER, E, DAMLJANOVIC, V, HABERMEIER, H.-U
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Sprache:eng
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Zusammenfassung:Epitaxial RuSr2GdCu2O8 (Ru-1212) films have been synthesized by post-annealing of precursor films prepared by pulsed laser deposition (PLD). Two types of the precursors, i.e. chemically homogeneous and multilayered chemically structured, have been used. Nearly single phase (00l) oriented Ru-1212 films were produced by post-annealing of the precursors. The films obtained from multilayered precursors demonstrated semiconductor properties with ferromagnetic ordering below TCurie125K. The films obtained from homogeneous precursors had Curie temperature in a range of 130-150K. Those films had temperature dependence of resistance varying from semiconducting to superconducting behaviour. Appearance of superconductivity correlates with impurities level.
ISSN:0921-4534
1873-2143
DOI:10.1016/j.physc.2004.10.006