Growth, structural and optical studies of CdSe/ZnSe nanostructures grown by MBE on GaAs and Si substrates

Structural (XRD and HRTEM) and optical properties of self‐assembled CdSe quantum dots with ZnSe barriers have been grown by molecular beam epitaxy on GaAs and Si/Ge substrates. The results of XRD and HRTEM measurements showed that high‐quality CdSe QD arrays embedded in ZnSe barriers could be grown...

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Veröffentlicht in:	Physica status solidi. C 2006-03, Vol.3 (3), p.536-539
Hauptverfasser:	Rzaev, Murvetali M., Kazakov, Igor P., Kozlovski, Vladimir I., Skasyrsky, Yan K., Onishchenko, Evgeny E., Schäffler, Friedrich, Hesser, Gunter, Pashaev, Elkhan M., Soubbotin, Ilia A.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.10.Nz 68.37.Lp 78.60.Hk 78.67.Hc 81.07.Ta 81.15.Hi
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Structural (XRD and HRTEM) and optical properties of self‐assembled CdSe quantum dots with ZnSe barriers have been grown by molecular beam epitaxy on GaAs and Si/Ge substrates. The results of XRD and HRTEM measurements showed that high‐quality CdSe QD arrays embedded in ZnSe barriers could be grown on Si/Ge virtual substrates. It has been shown, that QD structures grown on different substrates exhibit comparable high luminescence efficiency at low temperatures. Two peaks were observed in cathodoluminescence (CL) spectra of some samples grown on Si/Ge and GaAs substrates. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6351 1610-1634 1610-1642
DOI:	10.1002/pssc.200564155