Growth and characterization of ZnTe epilayers on (1 0 0) GaAs substrates by metalorganic vapor phase epitaxy

ZnTe films were grown on (1 0 0) GaAs substrates by metalorganic vapor phase epitaxy using dimethylzinc and diethyltelluride as the source materials. It was found that epitaxial ZnTe layers can be obtained on (1 0 0) GaAs substrates, and the crystal quality of the ZnTe layers depends strongly on the substrate temperature. A high-crystalline-quality ZnTe heteroepitaxial layer with 103 arcsec of the full-width at half-maximum value of the X-ray rocking curve for (4 0 0) reflection, was obtained in this experiment at the substrate temperature of 430 °C.