Electromigration failure in ultra-fine copper interconnects

This paper presents experimental evidence suggesting that electromigration (EM) can be a serious reliability threat when the dimension of Cu interconnects approaches the nanoscale range. To understand the failure mechanism prevailing in nanoscale Cu interconnects, single-level, 400-mm long interconn...

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Veröffentlicht in:	Journal of electronic materials 2003-10, Vol.32 (10), p.988-993
Hauptverfasser:	MICHAEL, Nancy L, KIM, Choong-Un, GILLESPIE, Paul, AUGUR, R. O. D
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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